Infineon IRLSL4030PBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-262

Description

Maximum Continuous Drain Current: 180 A

Transistor Material: Si

Width: 4.83mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Maximum Gate Threshold Voltage: 2.5V

Package Type: I2PAK (TO-262)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 87 nC @ 4.5 V

Channel Type: N

Length: 10.67mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 370 W Series: HEXFET Maximum Gate Source Voltage: -16 V, +16 V Height: 11.3mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 4.5 mΩ

This is N-channel MOSFET 180 A 100 V HEXFET 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IRLSL4030PBF. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 87 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 370 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 11.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4.5 mω maximum drain source resistance.